Photoluminescence of a staggered In0.5Ga0.5P/AlxGa1−xAs heterojunction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112330
Reference14 articles.
1. Growth and characterization of single‐heterostructure AlGaAs/InGaP red light‐emitting diodes by liquid‐phase epitaxy
2. Comparison of single‐ and double‐heterostructure AlGaAs/InGaP red light‐emitting diodes prepared by liquid‐phase epitaxy
3. Staggered-lineup heterojunctions as sources of tunable below-gap radiation: Operating principle and semiconductor selection
4. Staggered‐lineup heterojunctions as sources of tunable below‐gap radiation: Experimental verification
5. Growth and characterization of type-II/type-I AlGaInAs/InP interfaces
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ordering-induced electron accumulation at GaInP/GaAs hetero-interfaces;Journal of Crystal Growth;2000-12
2. Recombination dynamics in n-AlxGa1−xAs/n-In0.5Ga0.5P type-II heterostructures;Applied Physics Letters;1998-08-31
3. Cathodoluminescence and electron beam induced current study of partially relaxed AlGaAs/GaAs/InGaAs heterojunction phototransistors under operating conditions;Journal of Applied Physics;1997-08
4. Band line‐up transition in AlxGa1−xAs/In0.5Ga0.5P from capacitance‐voltage analysis;Applied Physics Letters;1996-06-10
5. High‐efficiency energy up‐conversion at GaAs‐GaInP2 interfaces;Applied Physics Letters;1995-11-06
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