Material properties of compositional graded InxGa1−xAs and InxAl1−xAs epilayers grown on GaAs substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362555
Reference14 articles.
1. Characteristics of $\bf In_{0.3}Ga_{0.7}As/In_{0.29}Al_{0.71}As$ Heterostructures Grown on GaAs Using InAlAs Buffers
2. Influence of mismatch on the defects in relaxed epitaxial InGaAs/GaAs(100) films grown by molecular beam epitaxy
3. Unstrained In0.3Ga0.7As/In0.29Al0.71As resonant tunnelling diodes grown on GaAs
4. Residual strain analysis of InxGa1−xAs/GaAs heteroepitaxial layers
5. Molecular‐beam epitaxial growth of InxAl1−xAs on GaAs
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