Residual strain analysis of InxGa1−xAs/GaAs heteroepitaxial layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108107
Reference17 articles.
1. Crystal Interfaces. Part II. Finite Overgrowths
2. Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds
3. Use of misfit strain to remove dislocations from epitaxial thin films
4. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures
5. Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures [Appl. Phys. Lett. 47, 322 (1985)]
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