Characteristics of $\bf In_{0.3}Ga_{0.7}As/In_{0.29}Al_{0.71}As$ Heterostructures Grown on GaAs Using InAlAs Buffers-Reference-Cited by-同舟云学术

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Characteristics of $\bf In_{0.3}Ga_{0.7}As/In_{0.29}Al_{0.71}As$ Heterostructures Grown on GaAs Using InAlAs Buffers

Published:1994-11-15 Issue:Part 2, No. 11B Volume:33 Page:L1574-L1576
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chyi Jen-Inn,Shieh Jia-Lin,Wu Chia-Song,Lin Ray-Ming,Pan Jen-Wei,Chan Yi-Jen,Lin Chun-Hong

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Controlling Fermi level pinning in near-surface InAs quantum wells;Applied Physics Letters;2022-08-29

2. MBE grown InAlAs/InGaAs lattice mismatched layers for HEMT application on GaAs substrate;Applied Surface Science;1998-01

3. Defects in metamorphic InxAl1−xAs (x<0.4) epilayers grown on GaAs substrates;Journal of Applied Physics;1997-07

4. Material properties of compositional graded InxGa1−xAs and InxAl1−xAs epilayers grown on GaAs substrates;Journal of Applied Physics;1996-06

5. GaAs-based In0.29 Al0.71As/In0.3Ga0.7As high-electron mobility transistors;Microwave and Optical Technology Letters;1996-02-20

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