Defects in metamorphic InxAl1−xAs (x<0.4) epilayers grown on GaAs substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365799
Reference15 articles.
1. Strain relief study concerning the InxGa1−xAs/GaAs (0.07
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3. Characteristics of $\bf In_{0.3}Ga_{0.7}As/In_{0.29}Al_{0.71}As$ Heterostructures Grown on GaAs Using InAlAs Buffers
4. Unstrained In0.3Ga0.7As/In0.29Al0.71As resonant tunnelling diodes grown on GaAs
5. Deep levels in MOCVD AI0.48In0.52As/InP
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3. Pseudomorphic and Metamorphic Quantum Dot Heterostructures for Long-Wavelength Lasers on GaAs and Si;IEEE Journal of Selected Topics in Quantum Electronics;2008
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5. Growth and characteristics of ultralow threshold 1.45μm metamorphic InAs tunnel injection quantum dot lasers on GaAs;Applied Physics Letters;2006-10-09
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