Electron band alignment between (100)InP and atomic-layer deposited Al2O3
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3496039
Reference21 articles.
1. Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics
2. Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric
3. High performance In0.7Ga0.3As metal-oxide-semiconductor transistors with mobility >4400 cm2/V s using InP barrier layer
4. Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors
5. Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment
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1. Determination of band offset in InP/YSZ hetero-junction by X-ray photoelectron spectroscopy;Vacuum;2018-01
2. Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition;Nanoscale Research Letters;2017-05-08
3. Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3;Journal of Applied Physics;2016-12-21
4. Determination of band offset in MgO/InP heterostructure by X-ray photoelectron spectroscopy;Vacuum;2016-12
5. Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study;Advances in Condensed Matter Physics;2014
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