High performance In0.7Ga0.3As metal-oxide-semiconductor transistors with mobility >4400 cm2/V s using InP barrier layer-Reference-Cited by-同舟云学术

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High performance In0.7Ga0.3As metal-oxide-semiconductor transistors with mobility >4400 cm2/V s using InP barrier layer

Published:2009-05-11 Issue:19 Volume:94 Page:193502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhao Han,Chen Yen-Ting,Yum Jung Hwan,Wang Yanzhen,Goel Niti,Lee Jack C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3133360

Reference13 articles.

1. High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

2. Proceedings of the 66th IEEE Device Research Conference;Lin T.,2008

3. Proceedings of the 66th IEEE Device Research Conference;Ok I.,2008

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1. Sub-50 nm Terahertz In_0.8Ga_0.2As Quantum-Well High-Electron-Mobility Transistors for 6G Applications;IEEE Transactions on Electron Devices;2023-04

2. Low-Field Mobility and High-Field Velocity of Charge Carriers in InGaAs/InP High-Electron-Mobility Transistors;IEEE Transactions on Electron Devices;2022-04

3. Impact of Sulfur Passivation on Carrier Transport Properties of In0.7Ga0.3As Quantum-Well MOSFETs;IEEE Journal of the Electron Devices Society;2021

4. Effect of Thermal Treatments on HfO2/In0.7Ga0.3As Metal-Oxide-Semiconductor Capacitor Characteristics;ECS Transactions;2019-12-17

5. GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 – In comparison with atomic layer deposited Al2O3;Journal of Crystal Growth;2017-11

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