Low-Field Mobility and High-Field Velocity of Charge Carriers in InGaAs/InP High-Electron-Mobility Transistors-Reference-Cited by-同舟云学术

Low-Field Mobility and High-Field Velocity of Charge Carriers in InGaAs/InP High-Electron-Mobility Transistors

Published:2022-04 Issue:4 Volume:69 Page:1786-1791
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Harrysson Rodrigues Isabel¹^ORCID,Vorobiev Andrei¹^ORCID

Affiliation:

1. Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden

Funder

Swedish Research Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9741401/09714140.pdf?arnumber=9714140

Reference43 articles.

1. Ensemble Monte Carlo based simulation analysis of GaN HEMTs for high-power microwave device applications;li,2001

2. Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors

3. Fabrication and characterization of InGaAs/InAlAs insulated gate pseudomorphic HEMTs having a silicon interface control layer;xie;IEICE Trans Electron,2001

4. 2-D Analytical Model for Current–Voltage Characteristics and Transconductance of AlGaN/GaN MODFETs

5. Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries

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