Design and Investigation of a Metamorphic InAs Channel Inset InP HEMT for Cryogenic Low-Noise Amplifiers-Reference-Cited by-同舟云学术

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Design and Investigation of a Metamorphic InAs Channel Inset InP HEMT for Cryogenic Low-Noise Amplifiers

Published:2023 Issue: Volume:11 Page:133115-133130
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Nandi Soumak¹^ORCID,Dubey Shashank Kumar²^ORCID,Kumar Mukesh¹^ORCID,Dwivedi Amit Krishna³^ORCID,Guduri Manisha⁴,Islam Aminul¹^ORCID

Affiliation:

1. Department of ECE, Birla Institute of Technology, Mesra, Ranchi, India

2. Department of ECE, G. Pullaiah College of Engineering and Technology, Kurnool, Andhra Pradesh, India

3. School of Engineering, University of Warwick, Coventry, U.K.

4. School of Computing and Informatics, University of Louisiana at Lafayette, Lafayette, LA, USA

Funder

University of Warwick, Coventry, CV4 7AL, U.K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/6287639/10005208/10328869.pdf?arnumber=10328869

Reference53 articles.

1. High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

2. Scattering of electrons by ionized impurities in semiconductors: quantum-mechanical approach to third body exclusion

3. A V-Band Integrated Receiver Front-End Based on 0.15 μm GaAs pHEMT Process for Passive Millimeter-Wave Imaging

4. High-Efficiency 28-/39-GHz Hybrid Transceiver Utilizing Si CMOS and GaAs HEMT for 5G NR Millimeter-Wave Mobile Applications

5. Enhancement of $f_{\mathrm {max}}$ to 910 GHz by Adopting Asymmetric Gate Recess and Double-Side-Doped Structure in 75-nm-Gate InAlAs/InGaAs HEMTs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design, simulation and analog/RF performance evaluation of a hetero-stacked source dual metal T-shaped gate tunnel-FET in thermally variable environments;Microsystem Technologies;2024-05-02

2. Composite channel 100 nm InP HEMT with ultrathin barrier for millimetre wave applications;Engineering Research Express;2024-03-01

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