A V-Band Integrated Receiver Front-End Based on 0.15 μm GaAs pHEMT Process for Passive Millimeter-Wave Imaging
Author:
Affiliation:
1. School of Electronic and Information Engineering, Beihang University, Beijing, China
2. Centers of Excellence for Science and Applied Technology, Islamabad, Pakistan
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/6287639/9668973/09782146.pdf?arnumber=9782146
Reference24 articles.
1. A 0.1–1 GHz low power RF receiver front-end with noise cancellation technique for WSN applications
2. K-band receiver front-ends in a GaAs metamorphic HEMT process
3. A 32–40 GHz 4-Channel transceiver with 6-bit amplitude and phase control
4. A Low-Power 670-GHz InP HEMT Receiver
5. A 90-nm CMOS V-Band Low-Power Image-Reject Receiver Front-End With High-Speed Auto-Wake-Up and Gain Controls
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