Impact of Sulfur Passivation on Carrier Transport Properties of In0.7Ga0.3As Quantum-Well MOSFETs-Reference-Cited by-同舟云学术

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Impact of Sulfur Passivation on Carrier Transport Properties of In0.7Ga0.3As Quantum-Well MOSFETs

Published:2021 Issue: Volume:9 Page:209-214
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Kim Jun-Gyu^ORCID,Jo Hyeon-Bhin^ORCID,Lee In-Geun^ORCID,Kim Tae-Woo^ORCID,Kim Dae-Hyun^ORCID

Funder

Civil-Military Technology Cooperation Program

Korea Institite for Advancement of Technology

Korea Government

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/9359727/09348904.pdf?arnumber=9348904

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of Electron Transport in Pseudomorphic In_0.52Al_0.48As/In_yGa_1-y As Double Quantum Well Structure;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07

2. Extraction of effective mobility of In Ga As/In Al As quantum well high-electron-mobility transistors on InP substrate;Solid-State Electronics;2022-11

3. Characteristics of In0.7Ga0.3As MOS Capacitors with Sulfur and Hydrazine Pretreatments;ECS Journal of Solid State Science and Technology;2021-09-01

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