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3. “Lg = 25 nm InGaAs/InAlAs high-electron mobility transistors with both fT and fmax in excess of 700 GHz”, 2019 Appl;Jo;Phys Express,2019
4. Lg = 19 nm In0.8Ga0.2As composite-channel HEMTs with fT = 738 GHz and fmax = 492 GHz;Jo;2020 IEEE International Electron Devices Meeting (IEDM),2020
5. 20 nm metamorphic HEMT with 660 GHz fT;Leuther,2011