Lg = 19 nm In0.8Ga0.2As composite-channel HEMTs with fT = 738 GHz and fmax = 492 GHz-Reference-Cited by-同舟云学术

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Lg = 19 nm In0.8Ga0.2As composite-channel HEMTs with fT = 738 GHz and fmax = 492 GHz

Published:2020-12-12 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Electron Devices Meeting (IEDM)
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Author:

Jo Hyeon-Bhin,Yun Seung-Won,Kim Jun-Gyu,Yun Do-Young,Lee In-Geun,Kim Dae-Hyun,Kim Tae-Woo,Kim Sang-Kuk,Yun Jacob,Kim Ted,Tsutsumi Takuya,Sugiyama Hiroki,Matsuzaki Hideaki

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9371868/9371888/09372070.pdf?arnumber=9372070

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of SiO2 hardmask on the DC and RF characteristics of InP HEMTs;Journal of Materials Science: Materials in Electronics;2023-10

2. Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs;Materials;2023-09-09

3. Performance of flexible In0.7Ga0.3As MOSFETs by utilizing liquid polyimide (LPI) transfer with effective mobility of 3,667 cm2/V-s;Solid-State Electronics;2023-08

4. The High Electron Mobility Transistor;75th Anniversary of the Transistor;2023-07-03

5. Performance Improvement by SiO₂ Hardmask in 100-nm InP-Based HEMTs for TMIC Applications;IEEE Transactions on Electron Devices;2023-05

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