Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3-Reference-Cited by-同舟云学术

Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

Published:2016-12-21 Issue:23 Volume:120 Page:235701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chou H.-Y.¹,O'Connor E.²,O'Mahony A.²^ORCID,Povey I. M.²^ORCID,Hurley P. K.²,Dong Lin³,Ye P. D.³,Afanas'ev V. V.¹^ORCID,Houssa M.¹,Stesmans A.¹

Affiliation:

1. Laboratory of Semiconductor Physics, Department of Physics, University of Leuven, Leuven, Belgium

2. Tyndall National Institute and Department of Chemistry, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland

3. School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA

Funder

KU Leuven (Katholieke Universiteit Leuven)

Fonds Wetenschappelijk Onderzoek (FWO)

Seventh Framework Programme (FP7)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4971178

Reference47 articles.

1. Advanced Gate Stacks for High-Mobility Semiconductors

2. V. V. Afanas'ev and A. Stesmans , inPhysics and Technology of High-k Gate Dielectrics–VII, edited by S. Kar , M. Houssa , S. VanElshocht , and D. Landheer ( Electrochemical Society, Pennington, NJ, 2009), pp. 95–103.

3. Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall

4. In situ study of surface reactions of atomic layer deposited LaxAl2−xO3 films on atomically clean In0.2Ga0.8As

5. Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer

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