In situ study of surface reactions of atomic layer deposited LaxAl2−xO3 films on atomically clean In0.2Ga0.8As
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3009303
Reference23 articles.
1. Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001)
2. Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon
3. High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric
4. Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2∕Al2O3 nanolaminate gate dielectric
5. Absence of Fermi level pinning at metal‐InxGa1−xAs(100) interfaces
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