Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall-Reference-Cited by-同舟云学术

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Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall

Published:2008-09 Issue:9 Volume:93 Page:093106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Herrera M.,Chi M.,Bonds M.,Browning N. D.,Woolman Joseph N.,Kvaas Robert E.,Harris Sean F.,Rhiger David R.,Hill Cory J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2977589

Reference10 articles.

1. Proposal for strained type II superlattice infrared detectors

2. Long‐wavelength infrared detectors based on strained InAs–Ga1−xInxSb type‐II superlattices

3. Type-II InAs/GaInSb superlattices for infrared detection: an overview

4. Near bulk-limited R0A of long-wavelength infrared type-II InAs∕GaSb superlattice photodiodes with polyimide surface passivation

5. Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes

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1. Studies on the surface treatment of InAs/GaSb type-II super-lattice long-wave infrared detectors;J INFRARED MILLIM W;2023

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3. Analysis of Size-Dependent Quantum Efficiency in AlGaInP Micro–Light-Emitting Diodes With Consideration for Current Leakage;IEEE Photonics Journal;2022-02

4. Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors;Advanced Photonics Research;2021-12-15

5. Dark current analysis of an InAs/GaSb type II superlattice infrared photodiode with SiO2 passivation;Journal of the Korean Physical Society;2021-04-20

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