Determination of energy thresholds of electron excitations at semiconductor/insulator interfaces using trap-related displacement currents

Author:

Afanas'ev V.V.ORCID,Schubert J.ORCID,Neft A.,Delie G.,Shlyakhov I.,Trepalin V.,Houssa M.,Stesmans A.

Funder

Flanders Innovation & Entrepreneurship

KU Leuven Internal Fund

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. The validity of Ramo's theorem;DeVisschere;Solid State Electron.,1990

2. Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3;Chou;J. Appl. Phys.,2016

3. Internal photoemission at interfaces of high-k insulators with semiconductors and metals;Afanas'ev;J. Appl. Phys.,2007

4. Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission;Shlyakhov;APL Mater.,2018

5. Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity;Chiappe;Nanotechnology,2018

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