Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission

Published:2018-02 Issue:2 Volume:6 Page:026801
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Shlyakhov I.¹,Chai J.²,Yang M.²,Wang S. J.²^ORCID,Afanas’ev V. V.¹,Houssa M.¹,Stesmans A.¹

Affiliation:

1. Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium

2. Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602

Funder

VLAIO/ERA-NET

Onderzoeksraad, KU Leuven

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5002617

Reference31 articles.

1. Van der Waals heterostructures and devices

2. Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides

3. Tunneling Transistors Based on Graphene and 2-D Crystals

4. Intimate contacts

5. Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of CVD chemistry on band alignment at the MoS2/SiO2 interface;Solid-State Electronics;2023-11

2. Role of Precursors Chemistry on the Growth and Band Alignment of Few-Layers MoS₂ From Liquid Chemical Vapor Deposition;2023 IEEE Nanotechnology Materials and Devices Conference (NMDC);2023-10-22

3. Variability of band alignment between WS₂ and SiO₂: Intrinsic versus extrinsic contributions;Journal of Vacuum Science & Technology A;2022-12

4. The WS2/AlN heterostructure band alignment by semi-local functional and its optical properties by the Bethe-Salpeter approximation on top of GW calculations;Materials Science in Semiconductor Processing;2022-09

5. Processing Stability of Monolayer WS2 on SiO2;Nano Express;2021-05-24

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3