Variability of band alignment between WS<sub>2</sub> and SiO<sub>2</sub>: Intrinsic versus extrinsic contributions-Reference-Cited by-同舟云学术

Variability of band alignment between WS₂ and SiO₂: Intrinsic versus extrinsic contributions

Published:2022-12 Issue:6 Volume:40 Page:062201
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Delie Gilles¹^ORCID,Litwin Peter M.²,Abad Gaby C.²,McDonnell Stephen J.²^ORCID,Chiappe Daniele³,Afanasiev Valeri V.¹

Affiliation:

1. Department of Physics and Astronomy, University of Leuven, 3001 Leuven, Belgium

2. Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904

3. Imec, Kapeldreef 75, B-3001 Leuven, Belgium

Abstract

Internal photoemission of electrons was used to determine the energy position of the top valence band of mono- and few-layer WS2 on an SiO2/Si substrate. It was found, contrary to density functional theory calculations, that the valence band top in WS2 shifts up in energy with respect to the conduction band minimum of SiO2 with decreasing number of monolayers. At the same time, the band alignment of WS2 with SiO2 appears to be less sensitive to the WS2 synthesis route than in the previously studied case of the MoS2/SiO2 interface, indicating less extrinsic WS2 variability.

Funder

KU Leuven

NSF-IUCRC

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://avs.scitation.org/doi/pdf/10.1116/6.0001987

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