High Mobility MoS2Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer-Reference-Cited by-同舟云学术

High Mobility MoS2Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

Published:2016-07-08 Issue:37 Volume:28 Page:8302-8308
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Wang Jingli¹,Yao Qian²,Huang Chun-Wei³,Zou Xuming¹,Liao Lei¹,Chen Shanshan²,Fan Zhiyong⁴,Zhang Kai⁵,Wu Wei¹,Xiao Xiangheng¹,Jiang Changzhong¹,Wu Wen-Wei³

Affiliation:

1. Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education; Wuhan University; Wuhan 430072 China

2. Department of Physics and Lab Nanoscale Condense Matter Physics; Xiamen University; Xiamen 361005 China

3. Department of Materials Science and Engineering; National Chiao Tung University; Hsin-chu 30010 Taiwan

4. Department of Electronic and Computer Engineering; The Hong Kong University of Science and Technology; Clear Water Bay; Kowloon Hong Kong SAR China

5. Suzhou Institute of Nano-tech and Nano-bionics; Chinese Academy of Sciences; Suzhou 215000 China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference34 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional atomic crystals

3. Graphene transistors

4. Single-layer MoS2 transistors

5. How Good Can Monolayer MoS2 Transistors Be?

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