Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment-Reference-Cited by-同舟云学术

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Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment

Published:2008-08-25 Issue:8 Volume:93 Page:082105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nguyen N. V.,Kirillov Oleg A.,Jiang W.,Wang Wenyong,Suehle John S.,Ye P. D.,Xuan Y.,Goel N.,Choi K.-W.,Tsai Wilman,Sayan S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2976676

Reference20 articles.

1. Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation

2. Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

3. InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition

4. Band offsets of high K gate oxides on III-V semiconductors

5. Simplified Surface Preparation for GaAs Passivation Using Atomic Layer-Deposited High- $\kappa$ Dielectrics

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2. Internal Photoemission Spectroscopy Measurements of Interfacial Energy Barriers in Operating TaN/Hf_0.5Zr_0.5O₂/TaN Metal/Ferroelectric/Metal (MFM) Devices;ACS Applied Electronic Materials;2024-04-30

3. Simulation of a Vertical Ballistic Quantum-Barrier Field-Effect Transistor Based on an Undoped AlxGa1–xAs Quantum Nanowire;Russian Microelectronics;2023-12

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5. A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga₂O₃, Al₂O₃, In₂O₃, ZnO, SnO₂, CdO, NiO, CuO, and Sc₂O₃;Applied Physics Reviews;2022-03

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