Direct observation of stacking fault shrinkage in 4H-SiC at high temperatures by in-situ X-ray topography using monochromatic synchrotron radiation-Reference-Cited by-同舟云学术

Direct observation of stacking fault shrinkage in 4H-SiC at high temperatures by in-situ X-ray topography using monochromatic synchrotron radiation

Published:2018-07-02 Issue:1 Volume:113 Page:012101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fujie Fumihiro¹^ORCID,Harada Shunta¹²^ORCID,Koizumi Haruhiko²,Murayama Kenta²,Hanada Kenji³,Tagawa Miho¹²,Ujihara Toru¹²⁴^ORCID

Affiliation:

1. Department of Materials Process Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

2. Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan

3. Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Minamiyamaguchi-cho 250-3, Seto 489-0965, Japan

4. GaN Advanced Device Open Innovation Laboratory (GaN-OIL), National Institute of Advanced Industrial Science and Technology (AIST), Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan

Funder

SIP

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5038189

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