Investigation of Ge1-xSnx/Ge with high Sn composition grown at low-temperature-Reference-Cited by-同舟云学术

Investigation of Ge1-xSnx/Ge with high Sn composition grown at low-temperature

Published:2011-10-17 Issue:4 Volume:1 Page:042118
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Yu I. S.¹,Wu T. H.¹,Wu K. Y.¹,Cheng H. H.¹,Mashanov V. I.²,Nikiforov A. I.²,Pchelyakov O. P.²,Wu X. S.³

Affiliation:

1. Center for Condensed Matter Science and Graduate Institute of Electronics Engineering, 1, Roosevelt Road, Section 4, National Taiwan University, Taipei, Taiwan

2. A.V. Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentyev Avenue, 13, Novosibirsk 630090, Russia

3. Department of Physics, Nanjing University, Nanjing, China

Funder

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference15 articles.

1. Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser

2. Optical critical points of thin-filmGe1−ySnyalloys: A comparativeGe1−ySny∕Ge1−xSixstudy

3. The Past, Present, and Future of Silicon Photonics

4. Predicted band gap of the new semiconductor SiGeSn

5. Ge–Sn semiconductors for band-gap and lattice engineering

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research progress of out-of-plane GeSn nanowires;Nanotechnology;2024-03-26

2. Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses;Nanoscale;2023

3. Use of Nanosecond Laser Annealing for Thermally Stable Ni(GeSn) Alloys;IEEE Journal of the Electron Devices Society;2023

4. Ni-based metallization of GeSn layers: A review and recent advances;Microelectronic Engineering;2023-01

5. Mid-infrared resonant light emission from GeSn resonant-cavity surface-emitting LEDs with a lateral p-i-n structure;Photonics Research;2022-09-14