Predicted band gap of the new semiconductor SiGeSn
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347704
Reference9 articles.
1. Optical waveguiding in a single-crystal layer of germanium silicon grown on silicon
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4. Electroreflectance and band structure of gray tin
5. First-principles electronic structure of Si, Ge, GaP, GaAs, ZnS, and ZnSe. I. Self-consistent energy bands, charge densities, and effective masses
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