Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses-Reference-Cited by-同舟云学术

Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses

Published:2023 Issue:17 Volume:15 Page:7745-7754
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Tai Yeh-Chen¹,An Shu²,Huang Po-Rei¹,Jheng Yue-Tong¹,Lee Kuo-Chih³,Cheng Hung-Hsiang³,Kim Munho²^ORCID,Chang Guo-En¹³^ORCID

Affiliation:

1. Department of Mechanical Engineering, and Advanced Institute of Manufacturing with High-Tech Innovations (AIM-HI), National Chung Cheng University, Chiayi 62102, Taiwan

2. School of Electrical and Electronic Engineering, Nanyang Technological University, 639798 Singapore, Singapore

3. Center for Condensed Matter Sciences, and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan

Abstract

A new low-cost, nontoxic, flexible GeSn mid-infrared resonant-cavity-enhanced photodetector with enhanced optical responses via strain and vertical cavity effects is developed to address the need for large-area, integrated mid-infrared flexible optoelectronics.

Funder

Ministry of Education - Singapore

Ministry of Science and Technology, Taiwan

Agency for Science, Technology and Research

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D2NR07107J

Reference66 articles.

1. R.Soref