Donor complex formation due to a high‐dose Ge implant into Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.355963
Reference6 articles.
1. Structure, properties and applications of GexSi1-xstrained layers and superlattices
2. Characterization of germanium implanted Si1−xGex layer
3. Defect control during solid phase epitaxial growth of SiGe alloy layers
4. Determination of boron and phosphorus concentration in silicon by photoluminescence analysis
5. New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and Germanium
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical properties of metal-oxide-semiconductor structures with low-energy Ge-implanted and annealed thin gate oxides;Journal of Applied Physics;2008-03-15
2. Structure study of GaN:Mg films by X-ray absorption near-edge structure spectroscopy;Solid State Communications;2001-02
3. Photoluminescence studies of epitaxial Si1−xGex and Si1−x−yGexCy layers on Si formed by ion beam synthesis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-01
4. Properties of Schottky contacts of aluminum on strained Si1−x−yGexCy layers;Applied Physics Letters;1996-12-09
5. Ion-Beam-Induced Epitaxy and Solid Phase Epitaxy of Sigec on Si Formed by Ge and C Ion Implantation and their Structural and Optical Properties;MRS Proceedings;1995
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