Determination of boron and phosphorus concentration in silicon by photoluminescence analysis
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89897
Reference9 articles.
1. Resistivity of Bulk Silicon and of Diffused Layers in Silicon
2. Ionized-Impurity Scattering Mobility of Electrons in Silicon
3. Simultaneous determination of the total content of boron and phosphorus in high‐resistivity silicon by ir spectroscopy at low temperatures
4. Photoluminescence Analyses of Shallow Impurities in Silicon
5. Correlation between Photoluminescence Spectra and Impurity Concentrations in Silicon
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