Properties of Schottky contacts of aluminum on strained Si1−x−yGexCy layers-Reference-Cited by-同舟云学术

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Properties of Schottky contacts of aluminum on strained Si1−x−yGexCy layers

Published:1996-12-09 Issue:24 Volume:69 Page:3743-3745
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mi Jian,Gupta Ashawant,Yang Cary Y.,Zhu Jintian,Yu Paul K. L.,Warren Patricia,Dutoit Michel

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.117208

Reference14 articles.

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of thermal effect on electrical properties of Si0.887Ge0.113 and Si0.887−yGe0.113Cy films;Journal of Applied Physics;2004-04-15

2. Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing;Solid-State Electronics;2003-04

3. C-V AND DLTS CHARACTERIZATION OF RAPID THERMAL OXIDES ON Si0.887Ge0.113 AND Si0.8811Ge0.113C0.0059 ALLOYS;International Journal of Modern Physics B;2002-11-20

4. Fermi level position at metal Si1−x−yGexCy interfaces;Journal of Applied Physics;2001-05-15

5. Schottky and ohmic contacts to doped Si1−x−yGexCy layers;Solid-State Electronics;1999-09

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