Fermi level position at metal Si1−x−yGexCy interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1365943
Reference54 articles.
1. Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbon
2. High quality Si1−x−yGexCy epitaxial layers grown on (100) Si by rapid thermal chemical vapor deposition using methylsilane
3. Theory of Surface States
4. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
5. Fermi-level position at a semiconductor-metal interface
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2. Platinum Germanosilicide Contacts Formed on Strained and Relaxed $\hbox{Si}_{1 - x}\hbox{Ge}_{x}$ Layers;IEEE Transactions on Electron Devices;2009-06
3. Schottky Barrier Height Engineering on NiSiGe/SiGe Contacts;ECS Transactions;2008-10-03
4. Self-aligned silicides for Ohmic contacts in complementary metal–oxide–semiconductor technology: TiSi2, CoSi2, and NiSi;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-07
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