Schottky Barrier Height Engineering on NiSiGe/SiGe Contacts
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Published:2008-10-03
Issue:10
Volume:16
Page:281-286
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Tan Cheng Cheh D.,Chua Chee Tee,Chi Dongzhi
Abstract
In this paper, we demonstrate Schottky barrier height adjustment of Nickel-Germanosilicide (NiSiGe) contact on Si0.7Ge0.3 by controlling the As+ implants at the NiSiGe/Si0.7Ge0.3 interface. Various dosage of As+ was implanted into both n- and p- type Si0.7Ge0.3 to demonstrate the control of effective barrier height. Electrical characterization shows ohmic contact can be achieved for NiSiGe on n-Si0.7Ge0.3. We use 2-D XRD to confirm presence of NiSiGe phase and TOF-SIMS to confirm the segregation of As+ doping at the contact-semiconductor interface.
Publisher
The Electrochemical Society