Electrical properties of metal-oxide-semiconductor structures with low-energy Ge-implanted and annealed thin gate oxides
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2888537
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1. Fast and long retention-time nano-crystal memory
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1. Magnetoelastically induced magnetic anisotropy transition in [CoO5nm/CoPt7nm]5 multilayer films;Journal of Magnetism and Magnetic Materials;2016-06
2. Si and Ge nanocrystals for future memory devices;Materials Science in Semiconductor Processing;2012-12
3. Physical Mechanism of Threshold Voltage Modulation by Ge Channel Ion Implantation in the TiN/HfO2Gate Stack Systems;Japanese Journal of Applied Physics;2011-06-20
4. Physical Mechanism of Threshold Voltage Modulation by Ge Channel Ion Implantation in the TiN/HfO2Gate Stack Systems;Japanese Journal of Applied Physics;2011-06-01
5. Structural and electrical properties of sol–gel derived Ge nanocrystals in SiO2 films;Applied Physics A;2010-12-17
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