Heteroepitaxy of GaN on Si(111) realized with a coincident-interface AlN/β-Si3N4(0001) double-buffer structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1629384
Reference20 articles.
1. Microstructure and photoluminescence of GaN grown on Si(111) by plasma‐assisted molecular beam epitaxy
2. Microstructure and photoluminescence of GaN grown on Si(111) by plasma‐assisted molecular beam epitaxy
3. Time‐resolved photoluminescence studies of GaN epilayers grown by gas source molecular beam epitaxy on an AlN buffer layer on (111) Si
4. GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment
5. Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties
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