Author:
Lim Suo Hon,Bin Dolmanan Surani,Tong Shi Wun,Liu Hongfei
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference42 articles.
1. Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe;Levinshtein,2001
2. Epitaxial of III-nitride led materials;Li,2020
3. Heuken, M. In Mass Production of Optoelectronic Devices for Solid State Lighting (SSL) by MOCVD, Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, Shanghai, 2008/10/30; Optical Society of America: Shanghai, 2008, p SaO1.
4. In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications;Lingaparthi;Thin Solid Film.,2020
5. Investigation of AlGaN/GaN high electron mobility transistors on silicon (111) substrates employing multi-stacked strained layer superlattice structures;Dalapati;Superlattices Microstruct.,2020
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献