Demonstration of lateral epitaxial growth of AlN on Si (1 1 1) at low temperatures by pulsed reactive sputter epitaxy

Author:

Hörich Florian,Borgmann Ralf,Bläsing Jürgen,Schmidt Gordon,Veit Peter,Bertram Frank,Christen Jürgen,Strittmatter André,Dadgar Armin

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. GaN-on-Si power technology: devices and applications;Chen;IEEE Trans. Electron Devices,2017

2. GaN-on-Si vertical schottky and p-n diodes;Zhang;IEEE Electron Device Lett.,2014

3. MOVPE growth of GaN on Si(1 1 1) substrates;Dadgar;J. Cryst. Growth,2003

4. A. Dadgar, M. Weyers, Nitride Semiconductors in Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications, John Wiley & Sons Ltd, 2019. ISBN: 978-1-119-31303-8.

5. Emergence of high quality sputtered III-nitride semiconductors and devices;Izyumskaya;Semicond. Sci. Technol.,2019

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