Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition
Author:
Affiliation:
1. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom
2. Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom
Funder
Engineering and Physical Sciences Research Council (EPSRC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4977428
Reference28 articles.
1. Ultraviolet light emitting diodes
2. InGaN based green laser diodes on semipolar GaN substrate
3. Luminescence of Eu ions inAlxGa1−xNacross the entire alloy composition range
4. Optical investigation of exciton localization in AlxGa1−xN
5. Dimensionality of excitons in laser-diode structures composed ofInxGa1−xNmultiple quantum wells
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2. Enhanced structural and optical properties of semipolar (112¯2) AlGaN film with insertion of AlN/AlGaN superlattice;Journal of Vacuum Science & Technology A;2023-07-26
3. Influences of nitridation treatment on the properties of semi-polar (11 2‾2) plane AlGaN films;Materials Science in Semiconductor Processing;2022-11
4. Optical properties of quasi-ordered 112̅2 AlGaN multi-quantum-well nanorod arrays;Journal of Alloys and Compounds;2021-12
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