Optical investigation of exciton localization in AlxGa1−xN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2434991
Reference35 articles.
1. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
2. Spatially resolved cathodoluminescence spectra of InGaN quantum wells
3. Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1−xN layers
4. Exciton localization in AlGaN alloys
5. Dynamics of anomalous optical transitions inAlxGa1−xNalloys
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2. Arsenic‐Induced Growth of Dodecagonal GaN Microrods with Stable a ‐Plane Walls;Advanced Optical Materials;2020-12-23
3. Modification of the Surface Properties of AlxGa1–xN Substrates with Gradient Aluminum Composition Using Wet Chemical Treatments;ACS Omega;2019-07-08
4. Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps;CrystEngComm;2019
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