Si doping mechanism in MOVPE-grown (100) β-Ga2O3 films

Abstract

A Langmuir adsorption model of the Si incorporation mechanism into metalorganic vapor-phase epitaxy grown (100) β-Ga2O3 thin films is proposed in terms of the competitive surface adsorption process between Si and Ga atoms. The outcome of the model can describe the major feature of the doping process and indicate a growth rate-dependent doping behavior, which is validated experimentally and further generalized to different growth conditions and different substrate orientations.