Point defects in Ga2O3
Author:
Affiliation:
1. Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814, USA
Funder
U.S. Department of Energy
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/am-pdf/10.1063/1.5142195
Reference103 articles.
1. Development of gallium oxide power devices
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4. β-Ga2O3 for wide-bandgap electronics and optoelectronics
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