Surface segregation and growth‐mode transitions during the initial stages of Si growth on Ge(001)2×1 by cyclic gas‐source molecular beam epitaxy from Si2H6-Reference-Cited by-同舟云学术

Surface segregation and growth‐mode transitions during the initial stages of Si growth on Ge(001)2×1 by cyclic gas‐source molecular beam epitaxy from Si2H6

Published:1994-01 Issue:1 Volume:75 Page:240-247
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tsu R.,Xiao H. Z.,Kim Y.‐W.,Hasan M.‐A.,Birnbaum H. K.,Greene J. E.,Lin D.‐S.,Chiang T.‐C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.355890

Reference34 articles.

1. Avalanche gain in GexSi1-x/Si infrared waveguide detectors

2. Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET's

3. Thin epitaxial Ge−Si(111) films: Study and control of morphology

4. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)

5. Stress-induced layer-by-layer growth of Ge on Si(100)

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