Stress-induced layer-by-layer growth of Ge on Si(100)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.9377/fulltext
Reference17 articles.
1. Spontaneous Formation of Stress Domains on Crystal Surfaces
2. Finite-temperature phase diagram of vicinal Si(100) surfaces
3. Equilibrium structures of Si(100) stepped surfaces
4. Observation of Order-Disorder Transitions in Strained-Semiconductor Systems
5. Equilibrium alloy properties by direct simulation: Oscillatory segregation at the Si-Ge(100) 2×1 surface
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