Indium Epitaxy on SiC(0001): A Roadmap to Large Scale Growth of the Quantum Spin Hall Insulator Indenene-Reference-Cited by-同舟云学术

Indium Epitaxy on SiC(0001): A Roadmap to Large Scale Growth of the Quantum Spin Hall Insulator Indenene

Published:2022-09-15 Issue:38 Volume:126 Page:16289-16296
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Erhardt Jonas¹²^ORCID,Bauernfeind Maximilian¹²,Eck Philipp²³,Kamp Martin¹⁴,Gabel Judith⁵,Lee Tien-Lin⁵,Sangiovanni Giorgio²³,Moser Simon¹²,Claessen Ralph¹²

Affiliation:

1. Physikalisches Institut, Universität Würzburg, D-97074 Würzburg, Germany

2. Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, D-97074 Würzburg, Germany

3. Institut für Theoretische Physik und Astrophysik, Universität Würzburg, D-97074 Würzburg, Germany

4. Physikalisches Institut and Röntgen Center for Complex Material Systems, Universität Würzburg, D-97074 Würzburg, Germany

5. Diamond Light Source, Harwell Science and Innovation Campus, Didcot, OX11 0DE, United Kingdom

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.2c05809

Reference49 articles.

1. Surface Reactions of Silicon (111) with Aluminum and Indium

2. Adatoms of indium on Si(111) surfaces: Application of reflection high energy electron diffraction to desorption experiments

3. In overlayers on Si(111)7×7: Growth and evolution of the electronic structure

4. Surface reconstructions of In on Si(111)

5. Chemisorption of group-III metals on the (111) surface of group-IV semiconductors: In/Ge(111)

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