Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126672
Reference14 articles.
1. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
2. AlGaN/GaN high electron mobility field effect transistors with low 1/f noise
3. Low-frequency noise in AlGaN-GaN doped-channel heterostructure field effect transistors grown on insulating SiC substrates
4. Low frequency noise and screening effects in AlGaN/GaN HEMTs
5. Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications
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1. A Comparative Study on the Effects of Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETs;IEEE Journal of the Electron Devices Society;2024
2. Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures;Semiconductor Science and Technology;2023-08-11
3. AC Excitation to Mitigate Drift in AlGaN/GaN HEMT-Based Sensors;IEEE Sensors Journal;2023-06-15
4. Impact of AlGaN Barrier Thickness and Substrate Material on the Noise Characteristics of GaN HEMT;IEEE Journal of the Electron Devices Society;2022
5. Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs Under Electrical and Thermal Stress;IEEE Journal of the Electron Devices Society;2021
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