Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs Under Electrical and Thermal Stress
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Published:2021
Issue:
Volume:9
Page:511-516
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ISSN:2168-6734
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Container-title:IEEE Journal of the Electron Devices Society
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language:
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Short-container-title:IEEE J. Electron Devices Soc.
Author:
Hu Qianlan,
Gu Chengru,
Zhan Dan,
Li XuefeiORCID,
Wu YanqingORCID
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology