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Low-frequency noise in AlGaN-GaN doped-channel heterostructure field effect transistors grown on insulating SiC substrates

  • Published:1998 Issue:23 Volume:34 Page:2274
  • ISSN:0013-5194
  • Container-title:Electronics Letters
  • language:en
  • Short-container-title:Electron. Lett.

Author:

Kuksenkov D.V.,Giudice G.E.,Temkin H.,Gaska R.,Ping A.,Adesida I.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication and comparative study of DC and low frequency noise characterization of GaN/AlGaN based MOS-HEMT and HEMT;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-09

2. Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors;Applied Physics Letters;2000-06-05

3. Growth of AlGaN on Si(111) by gas source molecular beam epitaxy;Applied Physics Letters;2000-05-22

4. GaN-based electronic devices;Solid-State Electronics;1999-08
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