Fabrication and comparative study of DC and low frequency noise characterization of GaN/AlGaN based MOS-HEMT and HEMT-Reference-Cited by-同舟云学术

Fabrication and comparative study of DC and low frequency noise characterization of GaN/AlGaN based MOS-HEMT and HEMT

Published:2017-09 Issue:5 Volume:35 Page:052202
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Hasan Md Rezaul¹,Motayed Abhishek²,Fahad Md Shamiul³,Rao Mulpuri V.¹

Affiliation:

1. Department of Electrical and Computer Engineering, George Mason University, 4400 University Drive, Fairfax, Virginia 22030

2. Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742

3. Division of Electrical and Computer Engineering, Louisiana State University, Baton Rouge, Louisiana 70803

Funder

National Science Foundation (NSF)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/am-pdf/10.1116/1.4998937

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