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Low frequency noise and screening effects in AlGaN/GaN HEMTs

  • Published:1998 Issue:24 Volume:34 Page:2357
  • ISSN:0013-5194
  • Container-title:Electronics Letters
  • language:en
  • Short-container-title:Electron. Lett.

Author:

Garrido J.A.,Calle F.,Muñoz E.,Izpura I.,Sánchez-Rojas J.L.,Li R.,Wang K.L.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The demonstration of recessed anodes AlGaN/GaN Schottky barrier diodes using microwave cyclic plasma oxidation/wet etching techniques;Japanese Journal of Applied Physics;2019-06-17

2. Effect of various Fe-doped AlGaN buffer layer of AlGaN/GaN HEMTs on Si substrate;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-07

3. Studying the short channel effect in the scaling of the AlGaN/GaN nanowire transistors;Journal of Applied Physics;2013-06-07

4. Impacts of Gate Recess and Passivation on AlGaN/GaN High Electron Mobility Transistors;Japanese Journal of Applied Physics;2007-02-08

5. Tunneling mechanism of the 1∕f noise in GaN∕AlGaN heterojunction field-effect transistors;Journal of Applied Physics;2005-06-15
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