Effect of various Fe-doped AlGaN buffer layer of AlGaN/GaN HEMTs on Si substrate-Reference-Cited by-同舟云学术

Effect of various Fe-doped AlGaN buffer layer of AlGaN/GaN HEMTs on Si substrate

Published:2017-07 Issue:4 Volume:35 Page:041205
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Chiu Hsien-Chin,Chen Shang-Cyun,Chiu Jiun-Wei,Li Bo-Hong,Xuan Rong,Hu Chih-Wei,Hsueh Kuang-Po

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4991535

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