High-Efficiency AlGaN/GaN/Graded-AlGaN/GaN Double-Channel HEMTs for Sub-6G Power Amplifier Applications-Reference-Cited by-同舟云学术

High-Efficiency AlGaN/GaN/Graded-AlGaN/GaN Double-Channel HEMTs for Sub-6G Power Amplifier Applications

Published:2023-05 Issue:5 Volume:70 Page:2241-2246
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Shi Chunzhou¹^ORCID,Yang Ling²^ORCID,Zhang Meng²^ORCID,Wu Mei²^ORCID,Hou Bin²^ORCID,Lu Hao²^ORCID,Jia Fuchun²^ORCID,Guo Fei¹,Liu Wenliang²^ORCID,Yu Qian²^ORCID,Ma Xiaohua²^ORCID,Hao Yue²^ORCID

Affiliation:

1. School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China

2. State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Fundamental Research Funds for the Central Universities of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10106527/10091168.pdf?arnumber=10091168

Reference23 articles.

1. Double-Channel AlGaN/GaN High Electron Mobility Transistor With Back Barriers

2. The Influence of Fe Doping Tail in Unintentionally Doped GaN Layer on DC and RF Performance of AlGaN/GaN HEMTs

3. High RF Performance GaN-on-Si HEMTs With Passivation Implanted Termination

4. Millimeter-Wave Power AlGaN/GaN HEMT Using Surface Plasma Treatment of Access Region

5. AlGaN-GaN Double-Channel HEMTs

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1. Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate;Journal of Electronic Materials;2024-07-13

2. Spacer Side-wall Processed 0.15 μm GaN HEMT for Ka-band Application;ECS Journal of Solid State Science and Technology;2024-07-01

3. Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure;ACS Omega;2024-05-28

4. Enhancing Reliability and RF Performance: The Impact of Fe Doped Back Barrier Optimization in GaN HEMTs;2024 7th International Conference on Devices, Circuits and Systems (ICDCS);2024-04-23

5. Structural, optical, and electrical characterization and performance comparison of AlGaN/GaN HEMT structures with different buffer layers;Vacuum;2024-01