A new model for the growth of silicon dioxide layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334145
Reference11 articles.
1. General Relationship for the Thermal Oxidation of Silicon
2. Thermal oxidation of silicon in various oxygen partial pressures diluted by nitrogen
3. A revised model for the oxidation of Si by oxygen
4. Reversal of Relative Oxidation Rates of <111> and <100> Oriented Silicon Substrates at Low Oxygen Partial Pressures
5. Charge accumulation and mobility in thin dielectric MOS transistors
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