Thermal oxidation of silicon in various oxygen partial pressures diluted by nitrogen
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.324099
Reference16 articles.
1. General Relationship for the Thermal Oxidation of Silicon
2. Kinetics of Thermal Growth of Silicon Dioxide Films in Water Vapor-Oxygen-Argon Mixtures
3. Kinetics and mechanism of thermal oxidation of silicon with special emphasis on impurity effects
4. Formation of 20–25Å Thermal Oxide Films on Silicon at 950°–1140°C
5. Kinetics of Thermal Growth of Ultra-Thin Layers of SiO[sub 2] on Silicon
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